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MPS6601RLRAG

MPS6601RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MPS6601RLRAG
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 648
  • Description: MPS6601RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPS6601
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 625W
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 25V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 4V
hFE Min 50
Turn Off Time-Max (toff) 75ns
Turn On Time-Max (ton) 280ns
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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